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Introduction of Aluminum Nitride Ceramic Materials

Introduction

Aluminum nitride is a high-performance ceramic with excellent electrical insulation and thermal conductivity, ideal for heat dissipation in semiconductor processing equipment. Its plasma resistance and mechanical strength make it crucial in optoelectronics and high-temperature components.

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Drawings of precision ceramic plates and rods
Plate material mm (L, H, and W can be selected as needed, customization supported)
L 3 5 8 10 12 15 18 20 22 25 28 More (Customizable)
W*H 100*100 90*140 95*145 150*150 160*160 122*290 110*275         More (Customizable)
Rod material mm (W, Ø can be selected as needed, customization supported)
Ø 0.5 0.8 0.9 1 1.5 2 2.5 3 3.5 4 4.5 More (Customizable)
W 60 100 120 200               More (Customizable)
Features

Aluminum nitride (Aluminum Nitride, AlN) is an advanced ceramic material highly valued in high-tech industries for its excellent thermal conductivity and electrical insulation. Aluminum nitride also boasts high mechanical strength and stable chemical properties, making it an ideal choice for electronics and industrial applications.

1. Excellent Thermal Conductivity and Electrical Insulation

Aluminum nitride combines very high thermal conductivity with excellent electrical insulation, making it highly valuable in applications that require efficient heat dissipation alongside electrical isolation.

  • Efficient Thermal Management Solutions: Aluminum nitride’s high thermal conductivity makes it an ideal heat dissipation material for high-performance electronic devices such as power semiconductors, high-density integrated circuits, and high-frequency electronic components. These applications often require materials to rapidly and effectively dissipate heat to prevent performance degradation or damage due to overheating.
  • Electrical Applications: While maintaining high thermal conductivity, aluminum nitride also exhibits outstanding electrical insulation. This is crucial for insulation components in applications like power conversion equipment and high-voltage electrical applications, where materials need to efficiently transfer heat without conducting electricity.

2. Thermal Expansion Coefficient Matching Silicon and Excellent Plasma Resistance

Aluminum nitride’s thermal expansion coefficient closely matches that of silicon, a critical feature along with its plasma resistance, making it particularly important in semiconductor manufacturing.

  • Semiconductor Manufacturing: Due to its thermal expansion coefficient matching silicon, aluminum nitride minimizes thermal stresses caused by temperature variations when used as substrates or thermal interface materials in semiconductor devices. This is essential for enhancing the reliability and performance of semiconductor devices.
  • Plasma Resistance: During semiconductor processing, components often endure harsh plasma environments that can corrode or damage weaker materials. Aluminum nitride’s excellent plasma resistance allows it to maintain stability in these conditions, preserving both performance and structural integrity.

These characteristics of aluminum nitride underscore its critical importance in modern high-tech fields, particularly in high-performance electronic devices and semiconductor manufacturing. Its exceptional physical properties not only enhance equipment performance but also extend product longevity, providing reliable material solutions for a variety of demanding industrial applications.

Primary characteristics
Type Unit Aluminum Nitride
Material \ ALN
Colour \ Gray
Density g/cm3 3.3
Mechanical properties
Type Unit Aluminum Nitride
Flexural Strength(20℃) Mpa 470
Compressive Strength(20℃) Mpa 2100
Modulus of Elastic(young)(20℃) Gpa 320
Tracture Toughness(20℃) MPam½ 2.6
Poi sion’s Ratio(20℃) \ 0.24
Hardness HRA(20℃) HRA 87
Vickers Hardness(HV1) Gpa(kg/mm2) 1122
Rockwell Hardness(45N) R45N 78.5
Thermal properties
Type Unit Aluminum Nitride
Thermal Expansion Coefficient 10-6K-1 4.6
Thermal Conductivity(20℃) W/mk 170
Thermal Shock Resistance △T.℃ 400
Specific Heat Capacity J/g·k 0.72
Max working Temperature(In Oxidizing) 1000
Electrical properties
Type Unit Aluminum Nitride
Vol une Resistivity at 20℃ Ωcm 2.75*1014
Dielectric Strength KV/mm 17
Dielectric Constant \ 8.38
Dielectric LossAngle at 20℃,1MHz20℃ tanδ 3*10-3
*Values ​​are typical material properties, actual values ​​may vary due to product configuration and manufacturing process.
*For more details, please feel free to contact our company.
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