Introduction of Aluminum Nitride Ceramic Materials
Aluminum nitride is a high-performance ceramic with excellent electrical insulation and thermal conductivity, ideal for heat dissipation in semiconductor processing equipment. Its plasma resistance and mechanical strength make it crucial in optoelectronics and high-temperature components.
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Aluminum nitride (Aluminum Nitride, AlN) is an advanced ceramic material highly valued in high-tech industries for its excellent thermal conductivity and electrical insulation. Aluminum nitride also boasts high mechanical strength and stable chemical properties, making it an ideal choice for electronics and industrial applications.
1. Excellent Thermal Conductivity and Electrical Insulation
Aluminum nitride combines very high thermal conductivity with excellent electrical insulation, making it highly valuable in applications that require efficient heat dissipation alongside electrical isolation.
- Efficient Thermal Management Solutions: Aluminum nitride’s high thermal conductivity makes it an ideal heat dissipation material for high-performance electronic devices such as power semiconductors, high-density integrated circuits, and high-frequency electronic components. These applications often require materials to rapidly and effectively dissipate heat to prevent performance degradation or damage due to overheating.
- Electrical Applications: While maintaining high thermal conductivity, aluminum nitride also exhibits outstanding electrical insulation. This is crucial for insulation components in applications like power conversion equipment and high-voltage electrical applications, where materials need to efficiently transfer heat without conducting electricity.
2. Thermal Expansion Coefficient Matching Silicon and Excellent Plasma Resistance
Aluminum nitride’s thermal expansion coefficient closely matches that of silicon, a critical feature along with its plasma resistance, making it particularly important in semiconductor manufacturing.
- Semiconductor Manufacturing: Due to its thermal expansion coefficient matching silicon, aluminum nitride minimizes thermal stresses caused by temperature variations when used as substrates or thermal interface materials in semiconductor devices. This is essential for enhancing the reliability and performance of semiconductor devices.
- Plasma Resistance: During semiconductor processing, components often endure harsh plasma environments that can corrode or damage weaker materials. Aluminum nitride’s excellent plasma resistance allows it to maintain stability in these conditions, preserving both performance and structural integrity.
These characteristics of aluminum nitride underscore its critical importance in modern high-tech fields, particularly in high-performance electronic devices and semiconductor manufacturing. Its exceptional physical properties not only enhance equipment performance but also extend product longevity, providing reliable material solutions for a variety of demanding industrial applications.
Type | Unit | Aluminum Nitride |
Material | \ | ALN |
Colour | \ | Gray |
Density | g/cm3 | 3.3 |
Type | Unit | Aluminum Nitride |
Flexural Strength(20℃) | Mpa | 470 |
Compressive Strength(20℃) | Mpa | 2100 |
Modulus of Elastic(young)(20℃) | Gpa | 320 |
Tracture Toughness(20℃) | MPam½ | 2.6 |
Poi sion’s Ratio(20℃) | \ | 0.24 |
Hardness HRA(20℃) | HRA | 87 |
Vickers Hardness(HV1) | Gpa(kg/mm2) | 1122 |
Rockwell Hardness(45N) | R45N | 78.5 |
Type | Unit | Aluminum Nitride |
Thermal Expansion Coefficient | 10-6K-1 | 4.6 |
Thermal Conductivity(20℃) | W/mk | 170 |
Thermal Shock Resistance | △T.℃ | 400 |
Specific Heat Capacity | J/g·k | 0.72 |
Max working Temperature(In Oxidizing) | ℃ | 1000 |
Type | Unit | Aluminum Nitride |
Vol une Resistivity at 20℃ | Ωcm | 2.75*1014 |
Dielectric Strength | KV/mm | 17 |
Dielectric Constant | \ | 8.38 |
Dielectric LossAngle at 20℃,1MHz20℃ | tanδ | 3*10-3 |
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